High-performance, self-powered photodetectors based on vertically stacked van der Waals heterostructures toward bifacial photovoltaics

被引:0
作者
Ding, Er-Xiong [1 ]
Karakassides, Anastasios [2 ]
Zhou, Yaoqiang [1 ]
Fang, Ruihuan [1 ]
Ali, Fida [1 ]
Kauppinen, Esko I. [2 ]
Sun, Zhipei [1 ]
Lipsanen, Harri [1 ]
机构
[1] Aalto Univ, Dept Elect & Nanoengn, FI-00076 Espoo, Finland
[2] Aalto Univ, Dept Appl Phys, FI-00076 Espoo, Finland
基金
欧洲研究理事会; 欧盟地平线“2020”;
关键词
Self-powered photodetector; Vertical heterostructure; Bifacial optoelectronics; Carbon nanotube film; TRANSITION-METAL DICHALCOGENIDES; SCATTERING; MONOLAYER;
D O I
10.1016/j.nanoen.2025.111062
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Self-powered photodetectors represent a transformative technology for next-generation wearable devices, particularly in environmental sensing and health monitoring applications. While significant progress has been made in this field, bifacial self-powered photodetectors utilizing vertically stacked van der Waals heterostructures remain largely unexplored. Here, we demonstrate an advancement in bifacial self-powered photodetectors through the innovative integration of a MoS2/WSe2 heterostructure as the photosensitive medium with transparent indium tin oxide and single-walled carbon nanotube (SWCNT) film electrodes in a vertical architecture. These photodetectors exhibit exceptional photodetection capabilities, ultrafast response speeds, and remarkable stability. Operating in photovoltaic mode, the photodetector achieves a notable open-circuit voltage of 0.52 V and a power conversion efficiency of 3.89 %, positioning it among the top-performing 2D materialbased photovoltaics reported to date. The exceptional bifacial functionality is evidenced by a near-unity bifacial factor of 98.5 %, demonstrating nearly equivalent power generation from both front and rear illumination. Furthermore, the photodetector delivers outstanding broadband photodetection performance across visible to near-infrared wavelengths, achieving a peak detectivity of 2.4 x 109 Jones under 840 nm laser illumination. This work not only establishes a scalable fabrication paradigm for wafer-scale flexible optoelectronics but also provides a fundamental framework for the development of advanced bifacial optoelectronics based on 2D materials.
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页数:10
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