Wideband CMOS Low-Noise Amplifier Using RC Feedback and Inductor for Resonance

被引：0
作者：
Yoon, Hyojin [1 ]
Kim, Chaeyun [2 ]
Kim, Bohyeon [2 ]
Lee, Jaeyong [1 ]
Park, Changkun [1 ,2 ]
机构：
[1] Soongsil Univ, Dept Elect Engn, Seoul 06978, South Korea
[2] Soongsil Univ, Dept Intelligent Semicond, Seoul 06978, South Korea
来源：
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2025年 / 35卷 / 06期
基金：
新加坡国家研究基金会;
关键词：
Wideband; Noise measurement; Inductors; Resonance; Radio frequency; Gain; Tuning; Resonant frequency; 5G mobile communication; Microwave filters; CMOS; RC feedback; resonance; wideband; LNA;
D O I：
10.1109/LMWT.2025.3553444
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we design a CMOS wideband low-noise amplifier (LNA) with staggered tuning technique. In a wideband LNA, a design technique that can secure the gain flatness using RC feedback and inductor for resonance is proposed. The common-source (CS) structure with an RC feedback and an inductor is analyzed using equivalent circuits, and it was verified that the gain could be flattened by adjusting the resonance frequency and the resistance of the RC feedback. In addition, a high-pass filter (HPF) structure and an adaptive bias circuit (ABC) are applied to obtain a reasonable noise figure (NF) and linearity in a wide frequency range. A designed wideband LNA is fabricated using 65-nm RFCMOS process. As a measured result, the 1-dB bandwidth is approximately 15.6GHz from 20.1 to 35.7GHz. The 3-dB bandwidth is measured at 18.4 GHz. In the range of 25-35 GHz, the NF is lower than 3.45 dB.
引用
收藏
页码：722 / 725
页数：4
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