Numerical investigation of oxygen concentration and v/G distribution in 300 mm Czochralski silicon

被引：0

作者：

Tang, Anchen ^{[1
,2
]}

Han, Xuefeng ^{[1
,3
,4
]}

Yuan, Shuai ^{[1
,2
]}

Gao, Yu ^{[5
]}

Cao, Jianwei ^{[5
]}

Ma, Xiangyang ^{[1
]}

Yang, Deren ^{[1
,2
,3
,4
]}

机构：

[1] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, Shangyu Inst Semicond Mat, Shaoxing 312399, Peoples R China

[3] Zhejiang Univ, Inst Adv Semicond, Hangzhou 311200, Peoples R China

[4] Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Zhejiang Prov Key Lab Power Semicond Mat & Devices, Hangzhou 311200, Peoples R China

[5] Zhejiang Jingsheng Mech & Elect Co Ltd, Prov Key Lab High Performance Silicon Mat Equipmen, Shaoxing 312352, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2025年 / 663卷

基金：

中国国家自然科学基金;

关键词：

A2. Czochralski method; B2. 300 mm Semiconducting silicon; A2. Single crystal growth; A1. Computer simulation; A1; Impurities; A1. Mass transfer; MECHANICAL STRENGTH; CRYSTAL-GROWTH; MASS-TRANSFER; TRANSPORT; PRECIPITATION; SIMULATION; FLOW; MELT; TEMPERATURE; SOLUBILITY;

D O I：

10.1016/j.jcrysgro.2025.128184

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

To ensure the growth of high-quality semiconductor-grade Czochralski (Cz) silicon, it is crucial to control the oxygen concentration within a specified range tailored to different device applications. This study presents a twodimensional, axisymmetric global model for heat and mass transfer during the growth of 300 mm semiconductor-grade Cz silicon crystals, based on the quasi-steady-state assumption. Intuitive distributions of oxygen concentration in both the melt and the crystal are illustrated at various solidification fractions. Simulation results are compared with our experimental results and those reported in literatures. Additionally, v/G distribution in the crystal is presented according to Voronkov's theory. Furthermore, the effects of turbulence models on the oxygen distribution and v/G distribution are investigated. The results reveal that the k-omega turbulence model predicts a lower oxygen concentration compared to the k-epsilon model, and there is no significant difference in the v/G distributions.

引用

页数：12