Numerical investigation of oxygen concentration and v/G distribution in 300 mm Czochralski silicon

To ensure the growth of high-quality semiconductor-grade Czochralski (Cz) silicon, it is crucial to control the oxygen concentration within a specified range tailored to different device applications. This study presents a twodimensional, axisymmetric global model for heat and mass transfer during the growth of 300 mm semiconductor-grade Cz silicon crystals, based on the quasi-steady-state assumption. Intuitive distributions of oxygen concentration in both the melt and the crystal are illustrated at various solidification fractions. Simulation results are compared with our experimental results and those reported in literatures. Additionally, v/G distribution in the crystal is presented according to Voronkov's theory. Furthermore, the effects of turbulence models on the oxygen distribution and v/G distribution are investigated. The results reveal that the k-omega turbulence model predicts a lower oxygen concentration compared to the k-epsilon model, and there is no significant difference in the v/G distributions.