An investigation of hole transport layers and electron transport layers to produce highly efficient K2TiI6-based perovskite solar cells

被引:0
作者
M. Khalid Hossain [1 ]
Kazi Md Sadat [2 ]
M. Shihab Uddin [3 ]
Apon Kumar Datta [4 ]
Prakash Kanjariya [5 ]
M. Sudhakara Reddy [3 ]
Rishiv Kalia [6 ]
Barani Selvaraj [7 ]
Aboud Ahmed Awadh Bahajjaj [8 ]
R. Balachandran [9 ]
Ali Hajjiah [10 ]
Rajesh Haldhar [11 ]
机构
[1] Bangladesh Atomic Energy Commission,Institute of Electronics, Atomic Energy Research Establishment
[2] Kyushu University,Department of Advanced Energy Engineering Science, Interdisciplinary Graduate School of Engineering Sciences
[3] Mymensingh Engineering College,Department of Electrical and Electronic Engineering
[4] CCN University of Science and Technology,Department of Electrical and Electronic Engineering
[5] Islamic University,Department of Electrical and Electronic Engineering
[6] Marwadi University,Marwadi University Research Center, Department of Physics, Faculty of Science
[7] JAIN (Deemed to be University),Department of Physics & Electronics, School of Sciences
[8] Chitkara University,Centre for Research Impact & Outcome, Chitkara University Institute of Engineering and Technology
[9] Sathyabama Institute of Science and Technology,Department of Electronics and Communication Engineering
[10] King Saud University,Department of Chemistry, College of Science
[11] Adama Science and Technology University,Department of ECE, College of Electrical Engineering and Computing
[12] Kuwait University,Department of Electrical Engineering, College of Engineering and Petroleum
[13] Yeungnam University,School of Chemical Engineering
关键词
Lead-free perovskite; Perovskite solar cell; K; TiI; absorber; D-PBTTT-14 HTL; CdZnS ETL; SCAPS-1D;
D O I
10.1038/s41598-025-98351-y
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摘要
In this theoretical study, potential K2TiI6 perovskite material has been used as the absorber layer of the investigated perovskite solar cells (PSCs). The SCAPS-1D program was used to conduct the numerical analysis where 10 different hole transport layers (HTLs) and 4 electron transport layers (ETLs) were used to find the best optimum device structure. While various HTLs were studied, D-PBTTT-14 showed the best-optimized performance and therefore it was chosen as the final HTL material for further studies in combination with 4 ETL materials. Different device parameters such as the thickness of the absorber, HTL, and ETL layers; doping concentrations, and defect densities are varied in this work to optimize the investigated device structures. Moreover, the effect of temperature, series and shunt resistance, J-V curve, Q-E curve, recombination and generation rates were explored in this study. After optimizing various device parameters, the device with CdZnS ETL demonstrated superior performance compared to other ETL devices. It achieved a power conversion efficiency (PCE) of 26.21%, fill factor (FF) of 88.06%, short-circuit current density (Jsc) of 20.951 mA/cm², and an open-circuit voltage (VOC) of 1.4205 V. Under fully optimized conditions, LBSO, Nb2O5, and PC60BM ETL devices showed PCE of 22.06%, 23.24%, and 23.12%, respectively. Based on the findings of this study, it can be stated that this work could be valuable for the practical implementation of K2TiI6 absorber-based PSCs.
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