Ta-based Au-free and low annealing temperature ohmic contacts on GaN and AlGaN/GaN heterostructures

被引：0

作者：

Xia, Songyuan ^{[1
,2
]}

Zhang, Yumin ^{[1
,3
]}

Sun, Yuanhang ^{[1
]}

Zhu, Qizhi ^{[1
]}

Liu, Wei ^{[1
]}

Wang, Jianfeng ^{[1
,3
]}

Xu, Ke ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou, Peoples R China

[2] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China

[3] Suzhou Nanowin Sci & Technol Co Ltd, Suzhou, Peoples R China

来源：

MATERIALS LETTERS | 2025年 / 391卷

基金：

中国国家自然科学基金;

关键词：

GaN; Ohmic contact; Ta; Low temperature;

D O I：

10.1016/j.matlet.2025.138473

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ta-based ohmic contacts on GaN and AlGaN/GaN heterostructures were investigated. The main advantage of the Ta-based ohmic contacts is the low annealing temperature, with the optimal range identified as 550---600 degrees C. Notably, the root-mean-square roughness of Ta-based contacts is 8.0 nm, far less than the 22.4 nm in Ti-based contacts. Additionally, the transport properties were also investigated through temperature-dependent I-V measurements, where field emission is the predominant mechanism on GaN while thermionic filed emission play a major role on AlGaN/GaN.

引用

页数：4

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