Heterogeneous Integration of GaN optoelectronics with Si microelectronics

被引：0

作者：

Choi, Hoi Wai ^{[1
]}

Cheung, Yuk Fai ^{[1
]}

Lyu, Hao ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China

来源：

2024 IEEE PHOTONICS CONFERENCE, IPC 2024 | 2024年

关键词：

Heterogeneous integration; GaN; LED; CMOS;

D O I：

10.1109/IPC60965.2024.10799672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present the heterogeneous integration GaN optoelectronics devices (such as LEDs and photodiodes) with Si-based electronics at the chip-scale level. This includes the integration of GaN LEDs and LED arrays with CMOS driving circuit, and GaN photodetectors with CMOS transimpedance amplifiers.

引用

页数：2

共 4 条

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OPTICS LETTERS, 2023, 48 (05) :1124-1127

[4]

Selvaraj SL, 2018, 2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018), P71, DOI 10.1109/EDTM.2018.8421431

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