Comparative Study of Millimeter-Wave Avalanche Noise Diodes in Different Si Technologies

被引：0
作者：
An, Samuel Nguyen Dinh [1 ]
Schiavolini, Giacomo [2 ]
Simoncini, Guendalina [3 ]
Orecchini, Giulia [2 ]
Goncalves, Joao Azevedo [1 ]
Goncalves, Cybelle Belem [1 ]
Alimenti, Federico [2 ]
机构：
[1] STMicroelectronics, Grenoble, France
[2] Univ Perugia, Dept Engn, Perugia, Italy
[3] Picosats, Trieste, Italy
来源：
2024 19TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC 2024 | 2024年
关键词：
On-chip noise measurements; avalanche noise diodes; millimeter-wave circuits; CMOS; SiGe BiCMOS;
D O I：
10.23919/EuMIC61603.2024.10732305
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Solid-state noise sources are essential components in highly reliable mm-wave systems for life- or mission-critical applications such as self-driving car radars, airborne and satellite communication systems, space science instruments, and 6G to THz communications. Integrating a noise source, typically based on the avalanche effect of diode junctions, allows for testing of the architecture during production and operational lifetime. This paper presents a comparative study of three avalanche noise diodes integrated in different silicon technologies. The study is based on a solid experimental work that highlights the key points for a successful device design aimed at increasing the generated noise power, bandwidth, and operating frequency.
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收藏
页码：424 / 427
页数：4
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