Complete study to boosting the power conversion efficiency of inorganic double perovskite Cs2SnI6 non-toxic and stable with efficiency ∼ 23 %

This research provides an in-depth investigation of vacancy-ordered non-toxic, lead-free Cs2SnI6 perovskite as an efficient light collector positioned between an electron transport layer (ETL): n-ZnO and an hole transport layer (HTL): P3HT, utilizing a cell simulator: SCAPS-1D. A theoretical and numerical strategy was applied to enhance the power conversion efficiency (PCE) of a lead-free, tin-based perovskite solar cell (PSC). After initial simulations, numerous physical characteristics of Cs2SnI6 perovskite, such as thickness, interfacial defect density, ETL and HTL thickness, and carriers concentration, for the cell architecture: FTO/ZnO/Cs2SnI6/P3HT/Au, were meticulously examined in order to search the optimal device performance, together with the work function, effects of parasitic resistance, and operating temperature. To comprehend the absorber doping profile, integrated junction potential, and spatial charge distribution, the impact of the DC bias voltage was examined utilizing C-V characteristics. C-f characteristics were implemented to provide deep insight into defects and conductance to analyze frequency-dependent admittance. The optimized FTO/ZnO/Cs2SnI6/P3HT/Au device showed a PCE of similar to 23 %, open-circuit voltage (Voc) of 1.08 V, short-circuit current density (Jsc) of 27.09 mA/cm(2), and fill factor (FF) of 77.5 %.