Effects of rapid thermal annealing on telecom C-band InAs quantum dots on InP (100) grown by droplet epitaxy

被引：0
|
作者：
Chan, Chak Lam [1 ]
Sala, Elisa Maddalena [1 ,2 ]
Clarke, Edmund [1 ,2 ]
Heffernan, Jon [1 ,2 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Broad Lane,North Campus, Sheffield S3 7HQ, England
[2] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Epitaxy Facil, North Campus,Broad Lane, Sheffield S3 7HQ, England
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2025年 / 58卷 / 02期
基金：
“创新英国”项目; 英国工程与自然科学研究理事会;
关键词：
rapid thermal annealing; quantum dots; InAs/InP; droplet epitaxy; MOVPE; photoluminescence; PHOTOLUMINESCENCE;
D O I：
10.1088/1361-6463/ad835d
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate the effects of rapid thermal annealing on emission from telecom C-band InAs/InP (100) quantum dots (QDs) grown by droplet epitaxy in metal-organic vapour phase epitaxy. Room temperature photoluminescence from the QD ensemble shows a tuned emission wavelength through the C-band and O-band while improving the emission intensity by similar to 4.5 times at an annealing temperature of 770 degrees C. A blueshift of the QD emission up to 430 nm has been achieved. Low-temperature micro-photoluminescence demonstrates single QD emission from the annealed samples with an improvement in linewidth of up to 30%.
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页数：6
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