ANNEALING OF MG IMPLANTS IN GAAS USING INCOHERENT RADIATION

被引：19

作者：

BLUNT, RT ^{[1
]}

SZWEDA, R ^{[1
]}

LAMB, MSM ^{[1
]}

CULLIS, AG ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 11期

关键词：

D O I：

10.1049/el:19840309

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：444 / 446

页数：3

共 10 条

[1] RADIATION ANNEALING OF GAAS IMPLANTED WITH SI [J].

ARAI, M ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) :L124-L126

[2] RECOIL PROFILES PRODUCED BY ION-IMPLANTATION THROUGH DIELECTRIC LAYERS [J].

BLUNT, RT ;

SWEDA, R ;

SANDERS, IR .

VACUUM, 1984, 34 (1-2) :281-284

[3] DISTRIBUTION OF ELECTRICALLY ACTIVE MG IMPLANTS IN GAAS [J].

CHOE, BD ;

YEO, YK ;

PARK, YS .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4742-4746

[4]

DAVIES D, 1983, IOP C SERIES, V65, P619

[5] INCOHERENT ANNEALING OF IMPLANTED LAYERS IN GAAS [J].

DAVIES, DE ;

MCNALLY, PJ ;

LORENZO, JP ;

JULIAN, M .

ELECTRON DEVICE LETTERS, 1982, 3 (04) :102-103

[6]

ITO K, 1983, JPN J APPL PHYS, V22, P299

[7] COMPARISON BETWEEN ATOMIC CONCENTRATION PROFILES AND DEFECT DENSITY PROFILES IN GAAS ANNEALED AFTER IMPLANTATION WITH BERYLLIUM [J].

LEE, KS ;

ESS, JM ;

LITTLEJOHN, MA ;

BENSON, RB ;

COMAS, J .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (01) :185-196

[8] RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP [J].

NISHIYAMA, K ;

ARAI, M ;

WATANABE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L563-L566

[9] RAPID THERMAL ANNEALING OF BE, SI, AND ZN IMPLANTED GAAS USING AN ULTRAHIGH POWER ARGON ARC LAMP [J].

TABATABAIEALAVI, K ;

CHOUDHURY, ANMM ;

FONSTAD, CG ;

GELPEY, JC .

APPLIED PHYSICS LETTERS, 1983, 43 (05) :505-507

[10] CORRELATION OF ELECTRICAL CARRIER AND ATOMIC PROFILES OF MG IMPLANTS IN GAAS [J].

YEO, YK ;

PARK, YS ;

PEDROTTI, FL ;

CHOE, BD .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6148-6153

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