Topological Exciton Density Wave in Monolayer WSe2

被引：1

作者：

Dong, Shan ^{[1
]}

Chen, Yingda ^{[1
,4
]}

Qu, Hongwei ^{[5
]}

Lou, Wen-Kai ^{[1
]}

Chang, Kai ^{[2
,3
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Semicond Phys & Chip Technol, Beijing 100083, Peoples R China

[2] Zhejiang Univ, Ctr Quantum Matter, Sch Phys, Hangzhou 310058, Peoples R China

[3] Zhejiang Univ, Inst Adv Study Phys, Hangzhou 310058, Peoples R China

[4] Taizhou Univ, Sch Mat Sci & Engn, Taizhou 318000, Peoples R China

[5] Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China

来源：

PHYSICAL REVIEW LETTERS | 2025年 / 134卷 / 06期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

TRANSITION; SEMICONDUCTOR; SEMIMETAL; PHASE;

D O I：

10.1103/PhysRevLett.134.066602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Based on the first-principles calculations coupled with the Bethe-Salpeter equation, the topological exciton density wave is investigated in two-dimensional monolayer WSe2. We find that the topological excitonic insulator phase can exist in monolayer WSe2, and it is robust against in-plane strain. In this system, the energy minimum of exciton bands is shifted to a finite in-plane momentum, forming a FuldeFerrell-Larkin-Ovchinnikov-like state. Using the Gross-Pitaevskii equations, stripe-patterned exciton density waves with a nonzero velocity emerge in monolayer WSe2. Our findings pave a new way for exploring the interplay between electron correlation and nontrivial topology.

引用

页数：6

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