One of the important directions of research in photovoltaics is the development of new thinfilm technology, which can replace the currently used, more expensive bulk silicon technology. The article discusses the findings from research focused on optimizing the parameters for the deposition of silicon thin films with P-type electrical conductivity for applications in photovoltaics. The growth rate was determined depending on the change in substrate temperature using reflectometry and the influence of deposition time on optical properties was determined using UV/VIS spectroscopy. Photovoltaic structures were made on substrates with an ITO layer and their electrical parameters were measured. The authors applied the magnetron sputtering method to deposit the layers, selecting it over the commercially used the chemical vapor deposition (CVD) method. This replacement could alleviate the necessity for high temperatures and broaden the potential applications of thinfilm solar cells.
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Indian Inst Technol, Dept Met & Mat Engn, Roorkee 247667, Uttar Pradesh, India
Indian Inst Technol, Ctr Nanotechnol, Roorkee 247667, Uttar Pradesh, IndiaIndian Inst Technol, Dept Met & Mat Engn, Roorkee 247667, Uttar Pradesh, India
Chawla, Vipin
Jayaganthan, R.
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Indian Inst Technol, Dept Met & Mat Engn, Roorkee 247667, Uttar Pradesh, India
Indian Inst Technol, Ctr Nanotechnol, Roorkee 247667, Uttar Pradesh, IndiaIndian Inst Technol, Dept Met & Mat Engn, Roorkee 247667, Uttar Pradesh, India
Jayaganthan, R.
Chawla, A. K.
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Indian Inst Technol, Ctr Nanotechnol, Roorkee 247667, Uttar Pradesh, India
Indian Inst Technol, Nano Sci Lab, Inst Instrumentat Ctr, Roorkee 247667, Uttar Pradesh, IndiaIndian Inst Technol, Dept Met & Mat Engn, Roorkee 247667, Uttar Pradesh, India
Chawla, A. K.
Chandra, Ramesh
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Indian Inst Technol, Ctr Nanotechnol, Roorkee 247667, Uttar Pradesh, India
Indian Inst Technol, Nano Sci Lab, Inst Instrumentat Ctr, Roorkee 247667, Uttar Pradesh, IndiaIndian Inst Technol, Dept Met & Mat Engn, Roorkee 247667, Uttar Pradesh, India