The optical excitation and applications of molybdenum disulfide (MoS2) is critical due to its limited thickness and susceptibility to damage from high-intensity laser illumination, which can cause significant local heating and structural degradation. To mitigate this issue, protective layers made from materials with high thermal conductivity and transparency, such as graphene (Gr), hexagonal boron nitride (h-BN), and Gr/h-BN heterostructure, have been explored. This study utilizes Raman and photoluminescence (PL) spectroscopy to assess the stability of both bare MoS2 flakes and MoS2 flakes covered with different protecting layers under varying laser power levels. When exposed to 13 mW/mu m2 laser for 30 min, bare MoS2 undergoes considerable structural degradation, characterized by the formation of protrusions and a reduction in the Raman signal to just 10 % of its original intensity. In contrast, the Gr/MoS2 heterostructure maintains the stability of both the Raman fingerprint peaks and PL intensity, with only a 0-15 % decrease. The h-BN/MoS2 system also shows improved stability, with the Raman signal decreasing to around 30 % of its initial intensity. Gr/h-BN/MoS2 exhibits similar stability to Gr/ MoS2. These findings indicate that the Gr/MoS2 system provides the highest stability under laser illumination, followed by the Gr/h-BN/MoS2 system and the h-BN/MoS2 system, while bare MoS2 demonstrates the lowest stability. The combined effects of efficient thermal dissipation and isolation from ambient oxygen offer significant protection to MoS2 under high-power illumination.
机构:
Lanzhou Jiaotong Univ, Sch Mat Sci & Engn, Lanzhou 730070, Peoples R ChinaLanzhou Jiaotong Univ, Sch Mat Sci & Engn, Lanzhou 730070, Peoples R China
Wang, Yunfeng
He, Minjuan
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Lanzhou Jiaotong Univ, Sch Mat Sci & Engn, Lanzhou 730070, Peoples R China
Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R ChinaLanzhou Jiaotong Univ, Sch Mat Sci & Engn, Lanzhou 730070, Peoples R China
He, Minjuan
He, Wenhao
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Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R ChinaLanzhou Jiaotong Univ, Sch Mat Sci & Engn, Lanzhou 730070, Peoples R China
He, Wenhao
Niu, Yuan
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Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R ChinaLanzhou Jiaotong Univ, Sch Mat Sci & Engn, Lanzhou 730070, Peoples R China
Niu, Yuan
Lu, Zhibin
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Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
Chinese Acad Sci, Lanzhou Inst Chem Phys, Sci Data Ctr, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R ChinaLanzhou Jiaotong Univ, Sch Mat Sci & Engn, Lanzhou 730070, Peoples R China
机构:
Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Peoples R China
Han, Tao
Liu, Hongxia
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Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Peoples R China
Liu, Hongxia
Chen, Shupeng
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Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Peoples R China
Chen, Shupeng
Chen, Yanning
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Beijing Smart Chip Microelect Technol Co Ltd, State Grid Key Lab Power Ind Chip Design & Anal T, Beijing 100192, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Peoples R China
Chen, Yanning
Wang, Shulong
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Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Peoples R China
Wang, Shulong
Li, Zhandong
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Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Peoples R ChinaXidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Xian 710071, Peoples R China
机构:
Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
Huang, Zongyu
Qi, Xiang
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Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
Qi, Xiang
Yang, Hong
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Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
Yang, Hong
He, Chaoyu
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Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
He, Chaoyu
Wei, Xiaolin
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机构:
Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
Wei, Xiaolin
Peng, Xiangyang
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机构:
Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
Peng, Xiangyang
Zhong, Jianxin
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Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China