Simultaneous study of acoustic and optic phonon scattering of electrons and holes in undoped GaAs/AlxGa1-xAs heterostructures

被引：1

作者：

Alava, Y. Ashlea ^{[1
,2
]}

Kumar, K. ^{[1
,2
]}

Harsas, C. ^{[1
]}

Mehta, P. ^{[1
]}

Hathi, P. ^{[1
]}

Chen, C. ^{[3
]}

Ritchie, D. A. ^{[3
]}

Hamilton, A. R. ^{[1
,2
]}

机构：

[1] Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia

[2] Univ New South Wales, ARC Ctr Excellence Future Low Energy Elect Technol, Sydney 2052, Australia

[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2024年 / 125卷 / 25期

关键词：

TEMPERATURE-DEPENDENCE; LIMITED MOBILITY; GAS; HETEROJUNCTIONS; OPTIMIZATION; GAAS;

D O I：

10.1063/5.0234082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The study of phonon coupling in doped semiconductors via electrical transport measurements is challenging due to unwanted temperature-induced effects such as dopant ionization and parallel conduction. Here, we study phonon scattering in 2D electrons and holes in the 1.6-92.5 K range without the use of extrinsic doping, where both acoustic and longitudinal optic (LO) phonons come into effect. We use undoped GaAs/ AlxGa1-xAs heterostructures and examine the temperature dependence of the sample resistivity, extracting phonon coupling constants and the LO activation energy. Our results are consistent with results obtained through approaches other than transport measurements and highlight the benefit of this approach for studying electron-phonon and hole-phonon coupling.

引用

页数：5

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