Recent Progress on Diamondoid Cu2SnSe3 Thermoelectric Materials: A Review

被引:11
作者
Chen, Pengpeng [1 ]
Xie, Hongyao [1 ]
Zhao, Li-Dong [1 ]
机构
[1] Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
基金
中国国家自然科学基金; 北京市自然科学基金;
关键词
Thermoelectric performance; Crystal structure; Carrier concentration; Band convergence; Lattice thermal conductivity; Scattering mechanism; ULTRALOW THERMAL-CONDUCTIVITY; POWER-GENERATION; LATTICE PLAINIFICATION; CRYSTAL-GROWTH; BAND-STRUCTURE; THIN-FILMS; PERFORMANCE; CONVERGENCE;
D O I
10.1007/s40195-024-01798-7
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Due to its unique electronic and thermal transport properties, diamondoid Cu2SnSe3 has garnered significant attention as a promising thermoelectric material. Over the past decade, numerous reports have demonstrated ZT exceeding 1.0 in this system, a benchmark for thermoelectric performance. In this paper, we summarize recent progress in Cu2SnSe3 thermoelectrics and introduce various strategies for optimizing its electrical and thermal transport properties. We review recent discoveries concerning crystal symmetry and electronic structure, and present a collection of reports on enhancing electronic transport properties through band structure modification. Additionally, we provide insights into how lattice dynamics and microstructure influence phonon transport behaviors and highlight the thermal conductivity reduction achieved through comprehensive phonon scattering mechanisms. Lastly, we outline the current challenges facing by Cu2SnSe3 and propose innovative ideas for future research.
引用
收藏
页码:707 / 719
页数:13
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