Optimizing broadband InGaAs/InP photodetectors for the SWIR range

被引：0

作者：

Rua, Marcelo G. ^{[1
]}

Kawabata, Rudy M. S. ^{[1
]}

Pires, Mauricio P. ^{[2
]}

Ferreira, Carlos L. ^{[3
]}

Torelly, Guilherme M. ^{[1
]}

Souza, Patricia L. ^{[1
]}

机构：

[1] Pontificia Univ Catolica Rio de Janeiro, LabSem, Engn Elect, Rio De Janeiro, Brazil

[2] Univ Fed Rio de Janeiro, Inst Fis, Rio De Janeiro, Brazil

[3] Inst Mil Engn, Subdiv Cursos Grad, Rio De Janeiro, Brazil

来源：

2024 38TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES, SBMICRO 2024 | 2024年

关键词：

InGaAsP; anti-reflective; coating; InGaAs; SWIR; photodiode;

D O I：

10.1109/SBMicro64348.2024.10673857

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two aspects of pin infrared photodetectors with InGaAs as the active layer for the short-wave infrared range (900 to 1700 nm) were optimized. The first one involved using a novel anti-reflective coating formed by two double layers of SiO2/TiO2, which presented an average 30% reduction in total reflectance compared to a device without the anti-reflective coating. The second one consisted of introducing a quaternary InGaAsP layer between the active InGaAs layer and the n-doped InP layer to reduce interface losses. An extraordinary increase by a factor of six in the responsivity of the device with the quaternary layer was reached.

引用

页数：3

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