Stability and Electronic Properties of SnS/ZnS Interfaces: A First-Principles Investigation

被引:0
作者
Dahule, Rohit [1 ]
Gao, Bo [2 ,3 ]
Hongo, Kenta [4 ,5 ]
Panda, Emila [6 ]
Ma, Yanming [7 ,8 ]
Maezono, Ryo [4 ]
机构
[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan
[2] Jilin Univ, Key Lab Automobile Mat MOE, Changchun 130012, Peoples R China
[3] Jilin Univ, Coll Mat Sci & Engn, Changchun 130012, Peoples R China
[4] Japan Adv Inst Sci & Technol, Sch Informat Sci, Nomi, Ishikawa 9231292, Japan
[5] JAIST, Res Ctr Adv Comp Infrastruct, Nomi, Ishikawa 9231292, Japan
[6] Indian Inst Technol Gandhinagar, Mat Engn Dept, Palaj 382355, Gujarat, India
[7] Jilin Univ, Coll Phys, Key Lab Mat Simulat Methods & Software, Minist Educ, Changchun 130012, Peoples R China
[8] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
关键词
DENSITY-FUNCTIONAL THEORY; TOTAL-ENERGY CALCULATIONS; BAND-GAP; SNS; ZNS; MONOLAYER; METALS; LAYER;
D O I
10.1021/acs.jpcc.4c06319
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this study, we investigate the stability and electronic properties of bulk, surface, and interface structures between tin sulfide (SnS) and zinc sulfide (ZnS) by using first-principles calculations and high-throughput interface structure search methods. Our analysis reveals significant differences in the electronic structures of these materials, with distinct bandgaps observed for SnS and ZnS in bulk and surface configurations as well as at their pristine interface. The pristine SnS/ZnS interface exhibits a staggered (type-II) band alignment, which is favorable for solar cell applications. We further explore the impact of interface defects, finding that an equal distribution of atoms from both SnS and ZnS surfaces at the interface offers optimal stability and maintains semiconducting properties. In contrast, interfaces with an excess of any single element tend to exhibit metallic characteristics. These findings highlight the critical role of atomic composition in the design of stable and efficient SnS/ZnS interfaces, paving the way for improved thin-film solar cell performance.
引用
收藏
页码:3158 / 3167
页数:10
相关论文
共 52 条
[1]   Achieving desired quality of ZnS buffer layer by optimization using air annealing for solar cell applications [J].
Agrawal, Divya ;
Suthar, D. ;
Agarwal, R. ;
Himanshu ;
Patel, S. L. ;
Dhaka, M. S. .
PHYSICS LETTERS A, 2020, 384 (24)
[2]   SnS-based thin film solar cells: perspectives over the last 25 years [J].
Andrade-Arvizu, Jacob A. ;
Courel-Piedrahita, Maykel ;
Vigil-Galan, Osvaldo .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (07) :4541-4556
[3]   Surface Properties of ZnS Nanoparticles: A Combined DFT and Experimental Study [J].
Balantseva, Elena ;
Berlier, Gloria ;
Camino, Bruno ;
Lessio, Martina ;
Ferrari, Anna Maria .
JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (41) :23853-23862
[4]   Dipole correction for surface supercell calculations [J].
Bengtsson, L .
PHYSICAL REVIEW B, 1999, 59 (19) :12301-12304
[5]   PROJECTOR AUGMENTED-WAVE METHOD [J].
BLOCHL, PE .
PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979
[6]   Synthesis, Characterization, and Electronic Structure of Single-Crystal SnS, Sn2S3, and SnS2 [J].
Burton, Lee A. ;
Colombara, Diego ;
Abellon, Ruben D. ;
Grozema, Ferdinand C. ;
Peter, Laurence M. ;
Savenije, Tom J. ;
Dennler, Gilles ;
Walsh, Aron .
CHEMISTRY OF MATERIALS, 2013, 25 (24) :4908-4916
[7]   Designing interfaces in energy materials applications with first-principles calculations [J].
Butler, Keith T. ;
Gautam, Gopalakrishnan Sai ;
Canepa, Pieremanuele .
NPJ COMPUTATIONAL MATERIALS, 2019, 5 (1)
[8]   Investigation of Cu(In,Ga)Se2 thin-film formation during the multi-stage co-evaporation process [J].
Caballero, R. ;
Kaufmann, C. A. ;
Efimova, V. ;
Rissom, T. ;
Hoffmann, V. ;
Schock, H. W. .
PROGRESS IN PHOTOVOLTAICS, 2013, 21 (01) :30-46
[9]   NEUTRON-DIFFRACTION STUDY OF THE STRUCTURAL PHASE-TRANSITION IN SNS AND SNSE [J].
CHATTOPADHYAY, T ;
PANNETIER, J ;
VONSCHNERING, HG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1986, 47 (09) :879-885
[10]   Anomalies in the bulk and surface electronic properties of SnS: effects of native defects [J].
Dahule, Rohit ;
Singh, Chetan C. ;
Hongo, Kenta ;
Maezono, Ryo ;
Panda, Emila .
JOURNAL OF MATERIALS CHEMISTRY C, 2022, 10 (14) :5514-5525