LATTICES OF ISLANDS OF ELECTRON-HOLE LIQUID IN DICHALCOGENIDES UNDER OPTICAL PUMPING

被引：0
作者：
Chernyuk, A. A. [1 ]
机构：
[1] Nat Acad Sci Ukraine, Inst Nucl Res, 47 Nauky Ave, UA-03680 Kyiv, Ukraine
来源：
UKRAINIAN JOURNAL OF PHYSICS | 2025年 / 70卷 / 02期
关键词：
dichalcogenides; exciton gas; electron-hole liquid; two-dimensional lattices;
D O I：
10.15407/ujpe70.2.118
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The formation of islands of the electron-hole liquid in the case of uniform light irradiation of transition metal dichalcogenides such as MoS2 and MoTe2 has been simulated numerically. The kinetics of exciton capture by the islands has been considered, and the distribution of the exciton density around the islands has been calculated accounting for the correlation of islands' positions in the exciton gas and the boundary conditions under various uniform pumping shapes. The size of the electron-hole liquid islands has been estimated. The optimal spatial arrangement of the electron-hole liquid islands and the dependence of the formed structure on the system's parameters have been found.
引用
收藏
页码：118 / 124
页数：7
相关论文
共 31 条
  • [1] Rice T.M., The electron-hole liquid in semiconductors: Theoretical aspects, Solid State Physics, 32, (1977)
  • [2] Jeffries C.D., Keldysh L.V., Electron-Hole Droplets in Semiconductors, (1983)
  • [3] Tihodeev S.G., The electron-hole liquid in a semiconduc-tor, Sov. Phys. Usp, 28, (1985)
  • [4] Sibeldin N.N., Electron–hole liquid in semiconductors and low-dimensional structures, Phys.-Usp, 60, (2017)
  • [5] Silver R.N., Lifetime, surface tension, and impurity effects in electron-hole condensation, Phys. Rev. B, 11, (1975)
  • [6] Westervelt R.M., Nucleation phenomena in electron-hole drop formation in Ge and Si: I. Nucleation rates, Phys. Status Solidi B, 74, (1976)
  • [7] Bagaev V.S., Zamkovets N.V., Keldysh L.V., Si-bel'din N.N., Tsvetkov V.A., Kinetics of exciton condensation in germanium, Sov. Phys. JETP, 43, (1976)
  • [8] Burbaev T.M., Kozyrev D.S., Sibeldin N.N., Sko-rikov M.L., Luminescence of a quasi-two-dimensional electron-hole liquid and excitonic molecules in Si/SiGe/Si het-erostructures upon two-electron transitions, JETP Letters, 98, (2014)
  • [9] Nikolaev S.N., Krivobok V.S., Bagaev V.S., On-ishchenko E.E., Novikov A.V., Shaleev M.V., Fine structure of the emission spectrum of a two-dimensional electron–hole liquid in SiGe/Si quantum wells, JETP Letters, 104, (2016)
  • [10] Pauc N., Calvo V., Eymery J., Fournel F., Magnea N., Electronic and optical properties of Si/SiO<sub>2</sub> nanostructures. I. Electron-hole collective processes in single Si/SiO<sub>2</sub> quantum wells, Phys. Rev. B, 72, (2005)
1234