Advancements in Free-Standing Ferroelectric Films: Paving the Way for Transparent Flexible Electronics

被引:1
作者
Pathak, Riya [1 ]
Anoop, Gopinathan [2 ]
Samanta, Shibnath [1 ]
机构
[1] Inst Adv Study Sci & Technol, Phys Sci Div, Gauhati 781035, Assam, India
[2] Amrita Vishwa Vidyapeetham, Dept Phys, Amritapuri 690525, Kerala, India
关键词
ferroelectrics; thin films; free-standing films; flexible electronics; energy harvesting; ENERGY-STORAGE PROPERTIES; DOPED HAFNIUM OXIDE; THIN-FILMS; STABILITY; ENHANCEMENT; NANOSENSORS;
D O I
10.3390/jcs9020071
中图分类号
TB33 [复合材料];
学科分类号
摘要
Free-standing ferroelectric films have emerged as a transformative technology in the field of flexible electronics, offering unique properties that enable a wide range of applications, including sensors, actuators, and energy harvesting devices. This review paper explores recent advancements in the fabrication, characterization, and application of free-standing ferroelectric films, highlighting innovative techniques such as multilayer structures and van der Waals epitaxy that enhance their performance while maintaining mechanical flexibility. We discuss the critical role of these films in next-generation devices, emphasizing their potential for integration into multifunctional systems that combine energy harvesting and sensing capabilities. Additionally, we address challenges related to leakage currents, polarization stability, and scalability that must be overcome to facilitate commercialization. By synthesizing current research findings and identifying future directions, this paper aims to provide a comprehensive overview of the state-of-the-art in free-standing ferroelectric films and their impact on the development of sustainable and efficient flexible electronic technologies.
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页数:28
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