Ultrahigh Exchange Bias Field/Coercive Field Ratio in In Situ Formed Two-Dimensional Magnetic Te-Cr2O3/Cr5Te6 Heterostructures

被引：0

作者：

Yi, Chen ^{[1
]}

Li, Zhou ^{[1
]}

Li, Qiuqiu ^{[1
]}

Li, Bailing ^{[2
]}

Zhang, Hongmei ^{[2
]}

He, Kun ^{[1
]}

Zhang, Liqiang ^{[2
]}

Zhang, Zucheng ^{[2
]}

Feng, Ya ^{[1
]}

Liu, Yingying ^{[2
]}

Liu, Miaomiao ^{[2
]}

Wang, Di ^{[2
]}

Li, Shanhao ^{[2
]}

Tang, Jingmei ^{[2
]}

Gao, Peng ^{[3
]}

Zhu, Manli ^{[1
]}

Wang, Yanru ^{[2
]}

Wu, Ruixia ^{[1
]}

Li, Jia ^{[2
]}

Liu, Xingqiang ^{[1
]}

Chen, Shulin ^{[1
]}

Ma, Chao ^{[4
]}

Liu, Yuan ^{[1
]}

Wei, Zhongming ^{[5
,6
]}

Liao, Lei ^{[1
]}

Li, Bo ^{[1
]}

Duan, Xidong ^{[2
]}

机构：

[1] Hunan Univ, Sch Phys & Elect,State Key Lab Chemo Biosensing &, Coll Semicond,Hunan Key Lab Two Dimens Mat,Minist, Coll Integrated Circuits,Changsha Semicond Technol, Changsha 410082, Peoples R China

[2] Hunan Univ, Coll Chem & Chem Engn, Hunan Key Lab Two Dimens Mat, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Hunan, Peoples R China

[3] Fudan Univ, Frontier Inst Chip & Syst, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China

[4] Hunan Univ, Coll Mat Sci & Engn, Changsha 410082, Peoples R China

[5] Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China

[6] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

来源：

ADVANCED MATERIALS | 2025年

基金：

中国国家自然科学基金;

关键词：

2D magnetic heterostructures; chemical vapor deposition; exchange bias effect; exchange bias field/coercive field ratio; Te-Cr2O3/Cr5Te6; heterostructures; FERROMAGNETISM; TEMPERATURE; DEPENDENCE; ANISOTROPY;

D O I：

10.1002/adma.202410816

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The exchange bias (EB) effect is a fundamental magnetic phenomenon, in which the exchange bias field/coercive field ratio (|H-EB/H-C|) can improve the stability of spintronic devices. Two-dimensional (2D) magnetic heterostructures have the potential to construct low-power and high-density spintronic devices, while their typically air unstable and |H-EB/H-C| lesser, limiting the possibility of applications. Here, 2D Cr5Te6 nanosheets have been systematically synthesized with an in situ formed approximate to 2 nm-thick Te doped Cr2O3 layer (Te-Cr2O3) on the upper surface by chemical vapor deposition (CVD) method. The strong and air stable EB effect, achieving a |H-EB/H-C| of up to 80% under an ultralow cooling field of 0.01 T, which is greater than that of the reported 2D magnetic heterostructures. Meanwhile, the uniformity of thickness and chemical composition of the Te-Cr2O3 layer can be controlled by the growth conditions which are highly correlated with the EB effect of 2D Te-Cr2O3/Cr5Te6 heterostructures. First-principles calculations show that the Te-Cr2O3 can provide uncompensated spins in the Cr2O3, thus forming strong spin pinning effect. The systematical investigation of the EB effect in 2D Te-Cr2O3/Cr5Te6 heterostructures with high |H-EB/H-C| will open up exciting opportunities in low-power and high-stability 2D spintronic devices.

引用

页数：10

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