GaN-on-Si Solid-State Electronic Devices for Multipliers Applications

被引：1

作者：

Chen, Xiaojin ^{[1
]}

Du, Hanghai ^{[1
]}

Xing, Weichuan ^{[2
]}

Li, Honglang ^{[3
]}

Zhou, Hong ^{[1
]}

Zhang, Jincheng ^{[1
,4
]}

Liu, Zhihong ^{[1
,4
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Fac Integrated Circuit, Xian, Peoples R China

[2] Xidian Univ, Guangzhou Inst Technol, Guangzhou, Peoples R China

[3] Chinese Acad Sci, Natl Ctr Nanosci & Tech, Beijing, Peoples R China

[4] Xidian Univ, GIT, Xian, Peoples R China

来源：

2024 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY, ICICDT 2024 | 2024年

关键词：

GaN-on-Si; Schottky Barrier Diode (SBD); metal-semiconductor-metal (MSM)2DEG varactor; cutoff frequency(fT); frequency multiplier;

D O I：

10.1109/ICICDT63592.2024.10717741

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We designed, fabricated and characterized silicon-based AlN/GaN 2DEG Schottky barrier diode (SBD) and AlGaN/GaN metal-semiconductor-metal(MSM)2DEG varactor. The AlN/GaN SBD has a series resistance (Rs) of 17.7 Omega and a zero-bias junction capacitance (C-j0) of 270 fF. The calculated cutoff frequency (fT) is 33 GHz. By simulation, we evaluated the frequency multiplier performance of this device. When the input power is 16 dBm at 10 GHz, a 10 dBm output signal was obtained at 20 GHz, with a doubling efficiency of about 26%. We achieved a MSM varactor with an extremely small anode-cathode spacing (L-ac = 450 nm) through a two-step lithography process. Based on the de-embedded S-parameter test results, the AlGaN/GaN MSM has a series resistance of 10 O and a junction capacitance of 3.4 fF at zero bias, with a cutoff frequency as high as 4.6 THz

引用

页数：4

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