Modeling interface charges in Al2O3/Ga2O3 normally-on n-channel field effect transistors

Exploring and advancing gallium oxide MOSFETs holds significance due to their exceptional high blocking voltage properties. Achieving optimal device design requires precise device simulations, especially considering the accurate incorporation of mobility models and oxide interface charges. This paper reports on the design and simulation normally-ON n-channel transistors modeling breakdown voltage, interface simulation of oxide charges and its relationship with the threshold voltage. For the device structure modeled a threshold voltage of -50 V and a breakdown voltage of 600 V are extracted. Comparative analyses with experimental data result in the extraction of an oxide interface charge and threshold voltage that are in agreement with measured data emphasizing the reliability and validity of the simulation outcomes in the pursuit of enhanced performance in normally-ON n-channel gallium oxide field effect transistors.