THEORETICAL AND EXPERIMENTAL STUDY OF THE STRUCTURE OF (Ge2)1-x-y(GaAs)x(ZnSe)y SOLID SOLUTION

Single crystal films of (Ge2)1-x-y(GaAs)x(ZnSe)y solid solution were obtained from a tin solution by liquid phase epitaxy at the initial crystallization temperature of 750 degrees C on GaAs[100] substrates. The single crystallinity of the as-grown (Ge2)0.02(GaAs)0.95(ZnSe)0.03 films was demonstrated by Xray diffraction. The obtained (Ge2)0.02(GaAs)0.95(ZnSe)0.03 film showed an expansion in the specific photosensitivity spectrum area, which was 0.7-1.54 eV. To explain the reasons for the appearance of this spectrum region, attention was paid to the structure and composition of the obtained film. The bonds between the atoms in the composition were studied using ATR-FTIR spectra and modelling. According to the obtained results, absorptions were observed in the regions of 2991 and 2882.5 cm-1 , which are related to the shape and size of the crystal lattice. Chemical bonds between Ge-As (411.7 cm-1), As-Zn-Se (417.5 cm-1), Ge-As, As-Zn, Zn-Se (425.5 cm-1), Zn-Se (435 cm-1), ZnSe-GaAs (441.69 cm-1), Ga-Se (450 cm-1), Ge-ZnSe-GaAs (461.68 cm-1) and Ge-ZnSe-GaAs (471.47 cm-1) atoms in the crystal lattice were also determined.