Trap States in p-NiO/n-Ga2O3 Heterojunctions on Czochralski β-Ga2O3 Crystals

被引：1
|
作者：
Nikolaev, V. I. [1 ,2 ]
Polyakov, A. Y. [2 ]
Krymov, V. M. [1 ]
Saranin, D. S. [1 ]
Chernykh, A. V. [2 ]
Vasilev, A. A. [2 ]
Schemerov, I. V. [2 ]
Romanov, A. A. [2 ]
Matros, N. R. [2 ]
Kochkova, A. I. [2 ]
Gostishchev, P. [2 ]
Chernykh, S. V. [2 ]
Shapenkov, S. V. [1 ]
Butenko, P. N. [1 ,2 ]
Yakimov, E. B. [2 ,3 ]
Pearton, S. J. [4 ]
机构：
[1] Perfect Crystals LLC, St Petersburg 194223, Russia
[2] Natl Univ Sci & Technol MISIS, Moscow 119049, Russia
[3] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Region, Russia
[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2024年 / 13卷 / 12期
关键词：
deep level transient spectroscopy; Ga2O3; gallium oxide; microelectronics - semiconductor materials; semiconductors;
D O I：
10.1149/2162-8777/ad9ace
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Heterojunctions (HJs) of p-NiO/n-Ga2O3 were prepared by deposition of thin films of p-NiO by ion beam sputtering on bulk nominally undoped (100) oriented n-Ga2O3 samples cleaved from Czochralski-grown (010) oriented crystal. Electrical properties and deep traps spectra were studied and compared with those obtained for similar samples with Ni Schottky diodes. Characteristic features of the NiO/Ga2O3 HJs are the built-in voltage of over 2 V compared to 1 V in Ni Schottky diodes, a strong frequency dispersion of capacitance due to the presence of high density over 10(18) cm(-3) of E-c-0.16 eV traps in the thin region adjacent to the NiO/Ga2O3 interface. For heterojunction diodes the strong increase of reverse current occurs at a much higher voltage than for Schottky diodes (120 V versus 60 V).
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页数：5
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