Trap States in p-NiO/n-Ga2O3 Heterojunctions on Czochralski β-Ga2O3 Crystals

被引：1

作者：

Nikolaev, V. I. ^{[1
,2
]}

Polyakov, A. Y. ^{[2
]}

Krymov, V. M. ^{[1
]}

Saranin, D. S. ^{[1
]}

Chernykh, A. V. ^{[2
]}

Vasilev, A. A. ^{[2
]}

Schemerov, I. V. ^{[2
]}

Romanov, A. A. ^{[2
]}

Matros, N. R. ^{[2
]}

Kochkova, A. I. ^{[2
]}

Gostishchev, P. ^{[2
]}

Chernykh, S. V. ^{[2
]}

Shapenkov, S. V. ^{[1
]}

Butenko, P. N. ^{[1
,2
]}

Yakimov, E. B. ^{[2
,3
]}

Pearton, S. J. ^{[4
]}

机构：

[1] Perfect Crystals LLC, St Petersburg 194223, Russia

[2] Natl Univ Sci & Technol MISIS, Moscow 119049, Russia

[3] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Region, Russia

[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2024年 / 13卷 / 12期

关键词：

deep level transient spectroscopy; Ga2O3; gallium oxide; microelectronics - semiconductor materials; semiconductors;

D O I：

10.1149/2162-8777/ad9ace

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heterojunctions (HJs) of p-NiO/n-Ga2O3 were prepared by deposition of thin films of p-NiO by ion beam sputtering on bulk nominally undoped (100) oriented n-Ga2O3 samples cleaved from Czochralski-grown (010) oriented crystal. Electrical properties and deep traps spectra were studied and compared with those obtained for similar samples with Ni Schottky diodes. Characteristic features of the NiO/Ga2O3 HJs are the built-in voltage of over 2 V compared to 1 V in Ni Schottky diodes, a strong frequency dispersion of capacitance due to the presence of high density over 10(18) cm(-3) of E-c-0.16 eV traps in the thin region adjacent to the NiO/Ga2O3 interface. For heterojunction diodes the strong increase of reverse current occurs at a much higher voltage than for Schottky diodes (120 V versus 60 V).

引用

页数：5

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