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Trap States in p-NiO/n-Ga2O3 Heterojunctions on Czochralski β-Ga2O3 Crystals
被引:1
|作者:
Nikolaev, V. I.
[1
,2
]
Polyakov, A. Y.
[2
]
Krymov, V. M.
[1
]
Saranin, D. S.
[1
]
Chernykh, A. V.
[2
]
Vasilev, A. A.
[2
]
Schemerov, I. V.
[2
]
Romanov, A. A.
[2
]
Matros, N. R.
[2
]
Kochkova, A. I.
[2
]
Gostishchev, P.
[2
]
Chernykh, S. V.
[2
]
Shapenkov, S. V.
[1
]
Butenko, P. N.
[1
,2
]
Yakimov, E. B.
[2
,3
]
Pearton, S. J.
[4
]
机构:
[1] Perfect Crystals LLC, St Petersburg 194223, Russia
[2] Natl Univ Sci & Technol MISIS, Moscow 119049, Russia
[3] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Region, Russia
[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
关键词:
deep level transient spectroscopy;
Ga2O3;
gallium oxide;
microelectronics - semiconductor materials;
semiconductors;
D O I:
10.1149/2162-8777/ad9ace
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Heterojunctions (HJs) of p-NiO/n-Ga2O3 were prepared by deposition of thin films of p-NiO by ion beam sputtering on bulk nominally undoped (100) oriented n-Ga2O3 samples cleaved from Czochralski-grown (010) oriented crystal. Electrical properties and deep traps spectra were studied and compared with those obtained for similar samples with Ni Schottky diodes. Characteristic features of the NiO/Ga2O3 HJs are the built-in voltage of over 2 V compared to 1 V in Ni Schottky diodes, a strong frequency dispersion of capacitance due to the presence of high density over 10(18) cm(-3) of E-c-0.16 eV traps in the thin region adjacent to the NiO/Ga2O3 interface. For heterojunction diodes the strong increase of reverse current occurs at a much higher voltage than for Schottky diodes (120 V versus 60 V).
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