Trap States in p-NiO/n-Ga2O3 Heterojunctions on Czochralski β-Ga2O3 Crystals

被引：1
|
作者：
Nikolaev, V. I. [1 ,2 ]
Polyakov, A. Y. [2 ]
Krymov, V. M. [1 ]
Saranin, D. S. [1 ]
Chernykh, A. V. [2 ]
Vasilev, A. A. [2 ]
Schemerov, I. V. [2 ]
Romanov, A. A. [2 ]
Matros, N. R. [2 ]
Kochkova, A. I. [2 ]
Gostishchev, P. [2 ]
Chernykh, S. V. [2 ]
Shapenkov, S. V. [1 ]
Butenko, P. N. [1 ,2 ]
Yakimov, E. B. [2 ,3 ]
Pearton, S. J. [4 ]
机构：
[1] Perfect Crystals LLC, St Petersburg 194223, Russia
[2] Natl Univ Sci & Technol MISIS, Moscow 119049, Russia
[3] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Region, Russia
[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2024年 / 13卷 / 12期
关键词：
deep level transient spectroscopy; Ga2O3; gallium oxide; microelectronics - semiconductor materials; semiconductors;
D O I：
10.1149/2162-8777/ad9ace
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Heterojunctions (HJs) of p-NiO/n-Ga2O3 were prepared by deposition of thin films of p-NiO by ion beam sputtering on bulk nominally undoped (100) oriented n-Ga2O3 samples cleaved from Czochralski-grown (010) oriented crystal. Electrical properties and deep traps spectra were studied and compared with those obtained for similar samples with Ni Schottky diodes. Characteristic features of the NiO/Ga2O3 HJs are the built-in voltage of over 2 V compared to 1 V in Ni Schottky diodes, a strong frequency dispersion of capacitance due to the presence of high density over 10(18) cm(-3) of E-c-0.16 eV traps in the thin region adjacent to the NiO/Ga2O3 interface. For heterojunction diodes the strong increase of reverse current occurs at a much higher voltage than for Schottky diodes (120 V versus 60 V).
引用
收藏
页数：5
相关论文
共 50 条
  • [1] First Demonstration of RESURF and Superjunction β-Ga2O3 MOSFETs with p-NiO/n-Ga2O3 Junctions
    Wang, Yibo
    Gong, Hehe
    Jia, Xiaole
    Han, Genquan
    Ye, Jiandong
    Liu, Yan
    Hu, Haodong
    Ou, Xin
    Ma, Xiaohua
    Hao, Yue
    2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2021,
  • [2] Temperature Sensitivity of Vertical Ga2O3 Junction Barrier Schottky Diode Using the p-NiO/n-Ga2O3 Heterojunction
    He, Liang
    Li, Enliang
    Duan, Xiaoyue
    Zhang, Mowen
    Ma, Teng
    Wang, Hongyue
    Li, Chao
    Chen, Yuan
    Chen, Yiqiang
    Li, Liuan
    IEEE SENSORS JOURNAL, 2025, 25 (06) : 9401 - 9407
  • [3] Electrical Properties of Vertical p-NiO/n-Ga2O3 and p-ZnCo2O4/n-Ga2O3 pn-Heterodiodes
    Schlupp, Peter
    Splith, Daniel
    von Wenckstern, Holger
    Grundmann, Marius
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (07):
  • [4] Comparison of PLD-Grown p-NiO/n-Ga2O3 Heterojunctions on Bulk Single Crystal β-Ga2O3 and r-plane Sapphire Substrates
    Rogers, D. J.
    Sandana, V. E.
    Teherani, F. Hosseini
    Razeghi, M.
    OXIDE-BASED MATERIALS AND DEVICES XV, 2024, 12887
  • [5] Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions
    Polyakov, A. Y.
    Yakimov, E. B.
    Saranin, D. S.
    Chernykh, A. V.
    Vasilev, A. A.
    Gostishchev, P.
    Kochkova, A. I.
    Alexanyan, L. A.
    Matros, N. R.
    Shchemerov, I. V.
    Pearton, S. J.
    JOURNAL OF APPLIED PHYSICS, 2024, 135 (16)
  • [6] Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions
    Polyakov, Alexander Y.
    Saranin, Danila S.
    Shchemerov, Ivan V.
    Vasilev, Anton A.
    Romanov, Andrei A.
    Kochkova, Anastasiia I.
    Gostischev, Pavel
    Chernykh, Alexey V.
    Alexanyan, Luiza A.
    Matros, Nikolay R.
    Lagov, Petr B.
    Doroshkevich, Aleksandr S.
    Isayev, Rafael Sh.
    Pavlov, Yu. S.
    Kislyuk, Alexander M.
    Yakimov, Eugene B.
    Pearton, Stephen J.
    SCIENTIFIC REPORTS, 2024, 14 (01):
  • [7] Czochralski grown Ga2O3 crystals
    Tomm, Y
    Reiche, P
    Klimm, D
    Fukuda, T
    JOURNAL OF CRYSTAL GROWTH, 2000, 220 (04) : 510 - 514
  • [8] Fabrication and Analysis of a Novel High Voltage Heterojunction p-NiO/n-Ga2O3 Diode
    Shimbori, Atsushi
    Wong, Hiu Yung
    Huang, Alex Q.
    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020), 2020, : 218 - 221
  • [9] Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode
    Yu, Cheng-Hao
    Yang, Hui
    Zhao, Wen-Sheng
    Wang, Da-Wei
    Guo, Hao-Min
    Hu, Yue
    Wu, Xiao-Dong
    Tan, Xin
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 24 (04) : 480 - 486
  • [10] Band alignment and electrical properties of NiO/?-Ga2O3 heterojunctions with different ?-Ga2O3 orientations
    Deng, Yuxin
    Yang, Ziqi
    Xu, Tongling
    Jiang, Huaxing
    Ng, Kar Wei
    Liao, Chao
    Su, Danni
    Pei, Yanli
    Chen, Zimin
    Wang, Gang
    Lu, Xing
    APPLIED SURFACE SCIENCE, 2023, 622
12345