Decipher Turn-On Voltage Plateau of High-Voltage Integrated Gate Commutated Thyristors

被引：0

作者：

Wu, Jinpeng ^{[1
,2
]}

Pan, Jianhong ^{[1
]}

Ren, Chunpin ^{[1
]}

Liu, Jiapeng ^{[3
]}

Zhao, Biao ^{[1
,2
]}

Yu, Zhanqing ^{[1
,2
]}

Zeng, Rong ^{[1
,2
]}

机构：

[1] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China

[2] Beijing Huairou Lab, Beijing 100084, Peoples R China

[3] Tsinghua Univ, Dept Energy & Power Engn, Beijing 100084, Peoples R China

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2025年 / 40卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Voltage; Space charge; Anodes; Thyristors; Logic gates; Charge carrier processes; Transistors; High-voltage techniques; Electrons; Transient analysis; Current rise rate (di/dt); hybrid line-commutated converter (H-LCC); operation stability; reverse-blocking integrated gate-commutated thyristor (RB-IGCT); HVDC;

D O I：

10.1109/TPEL.2024.3514459

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high-voltage integrated gate commutated thyristor (IGCT, reverse-blocking type) is a suitable device for hybrid line-commutated converters to resist commutation failures. During the turn-on process, a voltage plateau is observed under a high the current rise rate di/dt up to kA/mu s. In order to decipher the mechanism and the potential risk of this phenomenon, this article focuses on the microprocess and influencing factors of the voltage plateau and finds out that the shortage of injected holes depresses the process of discharging space charge region and leads to this phenomenon. Further, the thermal stability and life-long reliability are clarified. This article will be in favor of the research and development of high-voltage IGCT devices both scientifically and technically.

引用

页码：5223 / 5230

页数：8

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