Air-stable double halide perovskite Cs2CuBiBr6: synthesis and memristor application

被引:0
|
作者
Betal, Atanu [1 ]
Chetia, Anupam [1 ]
Saikia, Dibyajyoti [1 ]
Karmakar, Krishnendu [1 ]
Bera, Ganesh [2 ,3 ]
Dambhare, Neha V. [4 ,5 ]
Rath, Arup K. [4 ,5 ]
Sahu, Satyajit [1 ]
机构
[1] Indian Inst Technol Jodhpur, Dept Phys, Jodhpur 342037, India
[2] UGC, DAE CSR, Univ Campus,Khandwa Rd, Indore 452001, India
[3] Univ Valencia, Dept Fis Aplicada, MALTA Consolider Team, ICMUV, Valencia 46100, Spain
[4] CSIR, Natl Chem Lab, Pune 411008, India
[5] Acad Sci & Innovat Res, Ghaziabad 201002, India
关键词
LEAD-FREE;
D O I
10.1039/d4cp04639k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The excellent optical and electronic properties of halide perovskite materials have attracted researchers to investigate this particular field. However, the instability in ambient conditions and toxicity of materials like lead have given some setbacks to commercial use. To overcome these issues, perovskite-inspired materials with less toxic and excellent air-stable materials are being studied. Double perovskite materials are one of the perovskite materials. In this study, we have synthesized air-stable double perovskite Cs2CuBiBr6 using a solution process approach. The characterization of the material revealed that it has excellent crystallinity and high stability. The material shows excellent optical and electronic properties. It can be used in resistive memory devices. It shows stable current-voltage characteristics and analog switching. The ion migration through the active layer and accumulation of charge near the electrode region are the reasons behind the resistive switching.
引用
收藏
页码:3150 / 3159
页数:10
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