Linear Dichroism of the Optical Properties of SnS and SnSe Van der Waals Crystals

被引:0
作者
Tolloczko, Agata K. [1 ]
Ziembicki, Jakub [1 ]
Grodzicki, Milosz [1 ,2 ]
Serafinczuk, Jaroslaw [1 ,2 ]
Rosmus, Marcin [3 ]
Olszowska, Natalia [3 ]
Gorantla, Sandeep [2 ]
Erdi, Melike [4 ]
Tongay, Seth A. [4 ]
Kudrawiec, Robert [1 ,2 ]
机构
[1] Wroclaw Univ Sci & Technol, Dept Semicond Mat Engn, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland
[2] Lukasiewicz Res Network, PORT Polish Ctr Technol Dev, Stablowicka 147, PL-54066 Wroclaw, Poland
[3] Jagiellonian Univ, Solaris Natl Synchrotron Radiat Ctr, Czerwone Maki 98, PL-30392 Krakow, Poland
[4] Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA
基金
美国国家科学基金会;
关键词
anisotropy; linear dichroism; optical absorption; photoemission spectroscopy; tin selenide; tin sulphide; Van der Waals crystals; POWDER DIFFRACTION; BLACK PHOSPHORUS; PHASE-TRANSITION; LONE-PAIR; ABSORPTION; PBS;
D O I
10.1002/smll.202410903
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Tin monochalcogenides SnS and SnSe, belonging to a family of Van der Waals crystals isoelectronic to black phosphorus, are known as environmentally friendly materials promising for thermoelectric conversion applications. However, they exhibit other desired functionalities, such as intrinsic linear dichroism of the optical and electronic properties originating from strongly anisotropic orthorhombic crystal structures. This property makes them perfect candidates for polarization-sensitive photodetectors working in near-infrared spectral range. A comprehensive study of the SnS and SnSe crystals is presented, performed by means of optical spectroscopy and photoemission spectroscopy, supported by ab initio calculations. The studies reveal the high sensitivity of the optical response of both materials to the incident light polarization, which is interpreted in terms of the electronic band dispersion and orbital composition of the electronic bands, dictating the selection rules. From the photoemission investigation the ionization potential, electron affinity and work function are determined, which are parameters crucial for the design of devices based on semiconductor heterostructures.
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页数:13
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