Organic Interposers Using Zero-Misalignment-Via Technology and Silicon Wafer Carriers for Large Area Wafer-Level Package Applications

被引:1
作者
Aleksov, Aleksandar [1 ]
Talukdar, Tushar [2 ]
Strong, Veronica [2 ]
Sounart, Thomas [1 ]
Sawyer, Holly [3 ]
Aubertine, Carolyn [3 ]
Swan, Johanna [1 ]
机构
[1] Intel Corp, Chandler, AZ 85226 USA
[2] Intel Corp, Hillsboro, OR USA
[3] Intel Corp, Aloha, OR USA
来源
PROCEEDINGS OF THE IEEE 74TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 2024 | 2024年
关键词
organic; interposer; wafer-level-packaging; redistribution layer; self-aligned; via;
D O I
10.1109/ECTC51529.2024.00135
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper we demonstrate a novel approach to creating large area organic interposers with high-density interconnects for a die-last interposer flow. We manufactured a 2-layer redistribution-layer (RDL) unit of similar to 2070mm(2) area using the Zero-Misalignment-Via technology (ZMV). ZMV is a self-aligned via process that is tailored for delivering self-aligned vias in a semiadditive process flow. We manufactured the interconnect layers using an organic-based spin-coated dielectric material that has a low coefficient of thermal expansion (CTE) of similar to 19 ppm/degrees C, close to the CTE of Copper (16-17 ppm/degrees C). The low CTE of the material significantly decreases via stress during thermal cycling, a feature captured by finite-element modeling (FEM). While ZMV is not limited to two interconnect layers, a 2-layer short-loop stack was chosen as the simplest case to demonstrate all necessary building blocks for the ZMV technology, as well as to integrate design elements known from package-substrates into RDLs. One of the interconnect layers had high density interconnects with a line-density of 333 traces/mm, limited by the lithography tool used. The other layer consisted of large Cu-planes that in an electrically active system would be used for ground referencing and/or power delivery. Such planes are typical for package substrates but are a new design element integrated into the presented RDL layer stack. The similar to 3 reticle sized unit was manufactured using reticle stitching, demonstrating that the ZMV process is fully compatible with this process and hence can be used to manufacture wafer-sized interposers for future high-performance compute (HPC) applications if so required. This ZMV-based organic interposer technology is fully compatible with Silicon carrier wafers, by utilizing a novel IR debond method negating the necessity for glass carrier wafers, allowing for full compatibility with an existing silicon-centric toolset.
引用
收藏
页码:842 / 848
页数:7
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