Self mode-locking and passive mode-locking in monolithic two-section InGaAsP/InP quantum well laser diode

被引：0

作者：

Kleemann, Navina ^{[1
]}

Gjoni, Rejdi ^{[1
]}

Surkamp, Nils ^{[1
]}

Brenner, Carsten ^{[1
]}

Scherer, Philipp ^{[1
]}

VAN Delden, Marcel ^{[2
]}

Kolpatzeck, Kevin ^{[3
]}

Cherniak, Vladyslav ^{[3
]}

Balzer, Jan c. ^{[3
]}

Moehrle, Martin ^{[4
]}

Hofmann, Martin r. ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Chair Photon & Terahertz Technol PTT, Univ Str 150, D-44801 Bochum, Germany

[2] Ruhr Univ Bochum, Chair Elect Circuits EST, Univ Str 150, D-44801 Bochum, Germany

[3] UDE, Fac Engn, Chair Commun Syst NTS, Bismarckstr 81, D-47057 Duisburg, Germany

[4] Fraunhofer Heinrich Hertz Inst, Einsteinufer 37, D-10587 Berlin, Germany

来源：

OPTICS EXPRESS | 2024年 / 32卷 / 25期

关键词：

LOCKED LASER; PULSE GENERATION; DASH;

D O I：

10.1364/OE.537787

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We analyze different mode-locking regimes of a monolithic two-section InGaAsP/InP quantum well mode-locked laser. By varying the electrical operation conditions, we investigate and compare the transition from self mode-locking via four wave mixing to passive mode-locking. The results indicate that self mode-locking predominates, resulting in pulse durations as short as 330 fs, accompanied by a narrow linewidth frequency comb. In contrast, passive mode-locking does not provide sub-ps pulses and delivers significantly broadened comb lines.

引用

页码：44659 / 44670

页数：12

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