Self mode-locking and passive mode-locking in monolithic two-section InGaAsP/InP quantum well laser diode

被引：0
|
作者：
Kleemann, Navina [1 ]
Gjoni, Rejdi [1 ]
Surkamp, Nils [1 ]
Brenner, Carsten [1 ]
Scherer, Philipp [1 ]
VAN Delden, Marcel [2 ]
Kolpatzeck, Kevin [3 ]
Cherniak, Vladyslav [3 ]
Balzer, Jan c. [3 ]
Moehrle, Martin [4 ]
Hofmann, Martin r. [1 ]
机构：
[1] Ruhr Univ Bochum, Chair Photon & Terahertz Technol PTT, Univ Str 150, D-44801 Bochum, Germany
[2] Ruhr Univ Bochum, Chair Elect Circuits EST, Univ Str 150, D-44801 Bochum, Germany
[3] UDE, Fac Engn, Chair Commun Syst NTS, Bismarckstr 81, D-47057 Duisburg, Germany
[4] Fraunhofer Heinrich Hertz Inst, Einsteinufer 37, D-10587 Berlin, Germany
来源：
OPTICS EXPRESS | 2024年 / 32卷 / 25期
关键词：
LOCKED LASER; PULSE GENERATION; DASH;
D O I：
10.1364/OE.537787
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We analyze different mode-locking regimes of a monolithic two-section InGaAsP/InP quantum well mode-locked laser. By varying the electrical operation conditions, we investigate and compare the transition from self mode-locking via four wave mixing to passive mode-locking. The results indicate that self mode-locking predominates, resulting in pulse durations as short as 330 fs, accompanied by a narrow linewidth frequency comb. In contrast, passive mode-locking does not provide sub-ps pulses and delivers significantly broadened comb lines.
引用
收藏
页码：44659 / 44670
页数：12
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