Recent Progress in 2D Heterostructures for High-Performance Photodetectors and Their Applications

被引:0
作者
Ahn, Jongtae [1 ]
Yeon, Eungseon [2 ,3 ]
Hwang, Do Kyung [2 ,3 ,4 ]
机构
[1] Changwon Natl Univ, Dept Phys, Chang Won 51139, South Korea
[2] Korea Inst Sci & Technol KIST, Postsilicon Semicond Inst, Ctr Quantum Technol, Seoul 02792, South Korea
[3] Korea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 02841, South Korea
[4] Univ Sci & Technol UST, KIST Sch, Div Nanosci & Technol, Seoul 02792, South Korea
基金
新加坡国家研究基金会;
关键词
2D semiconductor; heterostructure; optoelectronic application; photodetection; SELF-DRIVEN PHOTODETECTOR; CHEMICAL-VAPOR-DEPOSITION; LIGHT-MATTER INTERACTIONS; PN HETEROJUNCTION; HIGH-DETECTIVITY; WAALS; GRAPHENE; GROWTH;
D O I
10.1002/adom.202403412
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
2D heterostructures have become a pivotal platform for realizing high-performance photodetectors as they enable precise control over optical and electronic properties at the atomic scale. By leveraging the complementary characteristics of 2D materials such as graphene, transition metal dichalcogenides, and black phosphorus, their heterostructures exhibit superior photodetection performance, including wide spectral coverage, enhanced quantum efficiency, and ultrafast photoresponse. This review provides an in-depth examination of the latest innovations in 2D heterostructure-based photodetectors, with a strong focus on efforts to optimize the device performance metrics of responsivity, detectivity, and response time. Promising applications are also highlighted, including infrared photodetection, high-resolution imaging, high-speed optical communication, and advanced environmental sensing, demonstrating how engineering factors like band alignment, interface quality, and heterostructure stacking significantly enhance device functionality. Finally, remaining challenges are addressed and future perspectives for advancing 2D heterostructure photodetectors are explored, particularly in terms of their integration into cutting-edge optoelectronic systems.
引用
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页数:21
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