ZnO/Gra/Si structure to improve photoelectric properties

被引：0

作者：

Li, Lin ^{[1
]}

Zhang, Zhang ^{[1
]}

Wang, Jianpei ^{[1
]}

Yang, Ping ^{[1
]}

机构：

[1] Jiangsu Univ, Sch Mech Engn, Lab Adv Design Mfg & Reliabil, MEMS,NEMS,OEDS, Zhenjiang 212013, Peoples R China

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2025年 / 196卷

基金：

中国国家自然科学基金;

关键词：

Optoelectronic properties; van der waals interface; Density functional theory; ZnO/Graphene/si; ZNO FILM; GRAPHENE; SI;

D O I：

10.1016/j.jpcs.2024.112321

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

To enhance the interface bonding and optoelectronic properties of ZnO/Si, we employed graphene (Gra) as a buffer layer to mitigate lattice mismatch. Density functional theory (DFT) was utilized to analyze the impact of graphene insertion on the interface structure and optoelectronic properties of ZnO/Si. Our findings indicate strong covalent bonds within the ZnO/Si interface, whereas the ZnO/Gra/Si interface exhibits van der Waals interactions. Additionally, the incorporation of graphene shifts the valence band of ZnO/Gra/Si closer to the conduction band, significantly improving its conductivity. Moreover, ZnO/Gra/Si demonstrates a 74 % increase in visible light utilization compared to ZnO/Si, highlighting the substantial potential of this sandwich structure in solar cell applications.

引用

页数：7

共 35 条

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