Design and optimization of high-performance MoSe2/PC60BM heterostructure based self-powered photodetector

被引:0
|
作者
Dubey, Vivek [1 ]
Srivastava, Anupam [2 ]
Sinha, Rupam [3 ]
Roy, Nirmal [1 ]
机构
[1] Motilal Nehru Natl Inst Technol Allahabad, Dept Elect & Commun Engn, Prayagraj 211004, Uttar Pradesh, India
[2] Dr APJ Abdul Kalam Tech Univ, Ctr Adv Studies, Lucknow 226021, Uttar Pradesh, India
[3] Natl Inst Technol Tiruchirappalli, Dept Chem Engn, Tiruchirappalli 620015, Tamil Nadu, India
来源
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2025年 / 314卷
关键词
MoSe; 2; PC; 60; BM; Photodetector; SCAPS; 1D; TMDC; SIMULATION;
D O I
10.1016/j.mseb.2025.118018
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This study explores the performance of molybdenum diselenide (MoSe2) based photodetectors for wearable technology, point-of-care diagnostics, and environmental monitoring, focusing on the MoSe2 absorber layer and [6,6]-phenyl C60 butyric acid methyl ester (PC60BM) in an Au/MoSe2/PC60BM/FTO configuration. Using the solar cell capacitance simulator, we optimized various physical parameters of the MoSe2 layer, including thickness, doping, defect density, interfacial defects, and radiative recombination, to achieve optimal device performance. The optimized device exhibited a maximum detectivity of 6.70x1013 Jones and a responsivity of 0.60 A/W under 790 nm illumination. The impact of incident power, temperature, and different metal contacts was also examined. This study uniquely integrates multiple critical parameters, including temperaturedependent behavior and metal contact effects, providing a comprehensive analysis that differentiates it from previous work. Our findings highlight the potential of transition metal dichalcogenides (TMDC) based photodetectors for a range of optoelectronic applications.
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页数:11
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