Luminescence Investigation of BaMgF4 Ceramics Under VUV Synchrotron Excitation

被引：0

作者：

Zhunusbekov, Amangeldy M. ^{[1
]}

Strelkova, Assel V. ^{[1
]}

Karipbayev, Zhakyp T. ^{[1
]}

Kumarbekov, Kuat K. ^{[1
]}

Akilbekov, Abdirash ^{[1
]}

Kassymkhanova, Raigul N. ^{[1
]}

Kassymzhanov, Murat T. ^{[1
]}

Smortsova, Yevheniia ^{[2
]}

Popov, Anatoli I. ^{[1
,3
]}

机构：

[1] LN Gumilyov Eurasian Natl Univ, Inst Phys & Tech Sci, Astana 010008, Kazakhstan

[2] Deutsch Elektronen Synchrotron DESY, D-22603 Hamburg, Germany

[3] Univ Latvia, Inst Solid State Phys, 8 Kengaraga, LV-1063 Riga, Latvia

来源：

CRYSTALS | 2025年 / 15卷 / 02期

关键词：

barium magnesium fluoride; ceramics; VUV excitation; FERROELECTRIC BAMGF4; OPTICAL-PROPERTIES; ENERGY-TRANSFER; OXYGEN DEFECTS; DOPED BAMGF4; GROWTH; FILMS; MN;

D O I：

10.3390/cryst15020127

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The luminescence properties of BaMgF4 ceramics synthesized using electron beam-assisted synthesis were investigated under vacuum ultraviolet (VUV) synchrotron excitation at a cryogenic temperature of T = 9 K. Their excitation spectra, measured over the 4-10.8 eV range, and corresponding luminescence spectra revealed a complex multicomponent structure with emission maxima at 3.71, 3.55, 3.33, 3, and similar to 2.8 eV. The primary luminescence band at 330 nm was attributed to self-trapped excitons (STE) excited near the band edge (9.3-9.7 eV), indicating interband transitions and subsequent excitonic relaxation. Bands at 3 and similar to 2.8 eV were associated with defect states efficiently excited at 6.45 eV, 8 eV and high-energy transitions near 10.3 eV. The excitation spectrum showed distinct maxima at 5, 6.45, and 8 eV, which were interpreted as excitations of defect-related states. These results highlight the interplay between interband transitions, excitonic processes, and defect-related luminescence, which defines the complex dynamics of BaMgF4 ceramics. These findings confirm that radiation synthesis introduces defect centers influencing luminescent properties, making BaMgF4 a promising material for VUV and UV applications.

引用

页数：14

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