On the feature accuracy of deep learning mask topography effect models

被引:0
作者
Engelmann, Linus [1 ,2 ]
IrenaeusWlokas [3 ]
机构
[1] Seoul Natl Univ, Dept Aerosp Engn, Seoul 08826, South Korea
[2] Seoul Natl Univ, Brain Korea Interdisciplinary Knowledge Based Trai, Seoul 08826, South Korea
[3] Univ Duisburg Essen, Dept Mech & Proc Engn, D-47057 Duisburg, Germany
基金
新加坡国家研究基金会;
关键词
Nanomanufacturing; Mask topography effects; Deep learning; Computational lithography; Lithography simulation model; GENERATIVE ADVERSARIAL NETWORKS; OPTICAL LITHOGRAPHY;
D O I
10.1016/j.mee.2025.112332
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A deep-learning-based lithography model using a generative neural network (GAN) approach is developed and assessed for its ability to predict aerial images at different resist heights. The performance of the GAN approach is evaluated by analyzing deviations between model-generated aerial images and golden images, as well as differences in critical dimension (CD) values. Additionally, error analysis is conducted based on the feature distribution of each photomask. Selected patterns and their aerial images are compared both qualitatively to assess local errors and quantitatively through root-mean-square (RMS) errors to evaluate global accuracy. Error analysis reveals the features produced by the deep learning model leading to the highest deviation from the rigorous model results, and the error is decomposed into the error contributions of underpredicted and over- predicted features. An array of aerial images for selected resist heights produced by the deep learning model is assessed, revealing increasing errors with increasing resist heights. The limitations of applying deep learning techniques in computational lithography are illustrated by comparing a target pattern with and without optical proximity correction (OPC) features.
引用
收藏
页数:9
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