Uniform Current Supply in Gated P-Type Si-Tips for Achieving High-Performance Field Electron Emitter Array

An inversion electrons diffusion model coupled with generation electrons injection was proposed to describe the current supply for each gated p-type Si-tips in an array, which was calculated using finite element simulation. It was clarified that an equivalent position of tip-arrangement is necessary for obtaining uniform current supply. A rational design of gated p-type Si-tips in ring-arrangement with equivalent position was demonstrated for obtaining uniform current supply in the array. The ring array achieved a high-performance field electron emission, i.e., a high current intensity of 303 mu A @ 179 V and spatially uniform emission sites. This work provides a new method to achieve uniform and high-performance gated p-type field emitter array.