Structural properties and Luminescence of PECVD-prepared β-Ga2O3•ZnO thin films

被引：0

作者：

Mochalov, Leonid ^{[1
,2
]}

Kudryashov, Mikhail ^{[2
]}

Telegin, Sergey ^{[2
]}

Slapovskaya, Ekaterina ^{[2
]}

Rafailov, Edik ^{[3
]}

机构：

[1] Lobachevsky Univ, Gagarin Av 23, Nizhnii Novgorod 603950, Russia

[2] UNCC, 9201 Univ City Blvd, Charlotte, NC 28223 USA

[3] Aston Univ, Aston St, Birmingham B4 7ET, W Midlands, England

来源：

2024 24TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, ICTON 2024 | 2024年

关键词：

thin films; gallium oxide; zinc oxide; cathode luminescence; electrical properties; PECVD; S-I GLASSES; OPTICAL-PROPERTIES; PLASMA; SILICON;

D O I：

10.1109/ICTON62926.2024.10647648

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

beta-Ga2O3 center dot ZnO thin films (Zn content up to 8 at.%) were prepared by Plasma-Enhanced Chemical Vapor Deposition (PECVD) under conditions of a low-temperature nonequilibrium plasma of inductively-coupled RF (13.56 MHz) discharge at low pressure (0.01 Torr), while directly high-purity elements - Ga and Zn, as well as high-purity O-2 were used as the sources of macrocomponents. The chemical composition, surface morphology, as well as cathode luminescence spectra and phase composition were studied. The luminescence and the phase composition were studied after annealing process in the atmosphere of argon at 400 degrees C.

引用

页数：4

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