Polarity-Reversal of Exchange Bias in van der Waals FePS3/Fe3GaTe2 Heterostructures

被引:0
|
作者
Xiao, Han [1 ]
Lyu, Bingbing [1 ]
Mi, Mengjuan [1 ]
Yuan, Jian [2 ]
Zhang, Xiandong [3 ]
Yu, Lixuan [1 ]
Cui, Qihui [4 ]
Wang, Chaofan [5 ]
Song, Jun [3 ]
Huang, Mingyuan [5 ]
Tian, Yufeng [6 ]
Liu, Liang [6 ]
Taniguchi, Takashi [7 ]
Watanabe, Kenji [8 ]
Liu, Min [1 ]
Guo, Yanfeng [2 ,9 ]
Wang, Shanpeng [4 ]
Wang, Yilin [1 ]
机构
[1] Shandong Univ, Shandong Technol Ctr Nanodevices & Integrat, Sch Integrated Circuits, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
[3] Shandong Wanbo Technol Co LTD, Jinan 250100, Peoples R China
[4] Shandong Univ, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China
[5] Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
[6] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China
[7] Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, Tsukuba 3050044, Japan
[8] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, Tsukuba 3050044, Japan
[9] ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
exchange bias; non-local manipulation; polarity-reversal; van der Waals heterostructure; INTRINSIC FERROMAGNETISM; FE3GATE2;
D O I
10.1002/advs.202409210
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Exchange bias (EB) in antiferromagnetic (AFM)/ferromagnetic heterostructures is crucial for the advancement of spintronic devices and has attracted significant attention. The common EB effect in van der Waals heterostructures features a low blocking temperature (Tb) and a single polarity. In this work, a significant EB effect with a Tb up to 150 K is observed in FePS3/Fe3GaTe2 heterostructures, and in particular, the EB exhibits an unusual temperature-dependent polarity-reversal behavior. Under a high positive field-cooling condition (e.g., mu 0H >= 0.5 T), a negative EB field (HEB) is observed at low temperatures, and with increasing temperature, the HEB crosses zero at approximate to 20 K, subsequently becomes positive and later approaches zero again at Tb. A model composed of a top FePS3/interfacial FePS3/Fe3GaTe2 sandwich structure is proposed. The charge transfer from Fe3GaTe2 to FePS3 at the interface induces net magnetic moments (triangle M) in FePS3. The interface favors AFM coupling, and thus the reversal of triangle M of the interfacial FePS3 leads to the polarity-reversal of EB. Moreover, the EB can be extended to the bare Fe3GaTe2 region of the Fe3GaTe2 flake partially covered by FePS3. This work provides opportunities for a deeper understanding of the EB effect and opens a new route toward constructing novel spintronic devices.
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页数:8
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