In Situ Studies of Atomic Layer Deposition of Hafnium Oxide on (Ag,Cu)(In,Ga)Se2 for Thin Film Solar Cells

被引：1

作者：

Martin, Natalia M. ^{[1
]}

Babucci, Melike ^{[1
]}

Stolt, Lars ^{[1
]}

Hultqvist, Adam ^{[1
]}

Kokkonen, Esko ^{[2
]}

Timm, Rainer ^{[3
]}

Schnadt, Joachim ^{[2
,3
]}

Platzer-Bjorkman, Charlotte ^{[1
]}

Torndahl, Tobias ^{[1
]}

机构：

[1] Uppsala Univ, Dept Mat Sci & Engn, Solar Cell Technol, S-75121 Uppsala, Sweden

[2] Lund Univ, MAX Lab 4, S-22100 Lund, Sweden

[3] Lund Univ, Dept Phys, Div Synchrotron Radiat Res, S-22100 Lund, Sweden

来源：

ACS APPLIED ENERGY MATERIALS | 2024年 / 8卷 / 01期

基金：

瑞典研究理事会;

关键词：

thin film solar cells; ACIGSe; alkali-PDT; AP-XPS; HfO x; ALD; PHOTOELECTRON-SPECTROSCOPY; SURFACE MODIFICATION; SPECIES BEAMLINE; AMBIENT-PRESSURE; INTERFACE; HFO2; XPS;

D O I：

10.1021/acsaem.4c02599

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ambient pressure X-ray photoelectron spectroscopy is employed to study in real time the chemical reactions occurring on (Ag,Cu)(In,Ga)Se2 (ACIGSe) surfaces during the first atomic layer deposition (ALD) cycle of HfO x under realistic synthesis conditions by using tetrakisdimethylamido-hafnium (TDMA-Hf) and H2O precursors. We find that the initial deposition due to surface reactions of HfO x ALD on ACIGSe depends on the pretreatment of the ACIGSe surface. While the growth of HfO x occurs directly upon exposure to the metal precursor for the nontreated (i.e., as-deposited) ACIGSe surface through chemical reactions, the growth is slower for the ACIGSe surface pretreated by postdeposition treatment by RbF. In the latter case, the diffusion of alkali and fluorine elements at the surface is observed during the ALD growth, thus leaving less reactive sites for the TDMA-Hf molecules to adsorb on. The results indicate that an optimization of the ALD of HfO x on ACIGSe needs to be taken into consideration for alkali metal fluoride-treated ACIGSe.

引用

页码：461 / 472

页数：12