Design of miniaturized package for SiC high-voltage device

In this paper, a miniature packaging solution for SiC high-voltage device is presented. The solution involves assembling a single SiC device by soldering between two ceramic substrates, utilizing metal post switches and then filling the gap with potting material. With dual ceramic substrates design in the package, the miniature packaging is characterized by small size, high voltage and double-sided cooling structure. The ceramic substrates are designed and manufactured using DPC (direct copper plating) technology along with through-ceramic-vias (TCVs) to deliver structural support, current paths, and channels for heat dissipation. Compared to TO247 packages, the miniaturized packages exhibit a reduction in size by 90% and a decrease in parasitic inductance by 80%. The high-voltage insulation tests conducted demonstrate that the miniaturized package can endure voltages up to 3 kV while maintaining a low leakage current in the nanoampere range.