Efficiency droop of AlGaN-based deep-ultraviolet miniaturized light-emitting diodes under electrical stress

被引：3

作者：

Zheng, Xi ^{[1
]}

Ai, Sidan ^{[1
]}

Lu, Tingwei ^{[1
]}

Dai, Yurong ^{[1
]}

Tong, Changdong ^{[1
]}

Lu, Yijun ^{[1
]}

Chen, Zhong ^{[1
]}

Guo, Weijie ^{[1
,2
]}

机构：

[1] Xiamen Univ, Sch Elect Sci & Engn, Dept Elect Sci, Natl Innovat Platform Fus Ind & Educ Integrated Ci, Xiamen 361005, Peoples R China

[2] Xiamen Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2024年 / 125卷 / 23期

基金：

中国国家自然科学基金;

关键词：

LEDS; GAN; PERFORMANCE; CHALLENGES; BANDWIDTH; DENSITY;

D O I：

10.1063/5.0226549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reduction on efficiency of AlGaN-based high-voltage (HV) deep ultraviolet light emitting diodes (DUV-LEDs) with quadra-serial connection and different geometries has been investigated under electrical stress. After the electrical aging, the Shockley-Read-Hall nonradiative recombination becomes more significant, while the Auger recombination is mitigated. The hexagonal HV DUV-LEDs reach a maximum external quantum efficiency of 6.1% and exhibit superior performance after aging. The results provide insights into the impacts of submesa geometry on reliability and UV light communication performance of HV DUV-LEDs.

引用

页数：6