Efficiency droop of AlGaN-based deep-ultraviolet miniaturized light-emitting diodes under electrical stress

被引：3
作者：
Zheng, Xi [1 ]
Ai, Sidan [1 ]
Lu, Tingwei [1 ]
Dai, Yurong [1 ]
Tong, Changdong [1 ]
Lu, Yijun [1 ]
Chen, Zhong [1 ]
Guo, Weijie [1 ,2 ]
机构：
[1] Xiamen Univ, Sch Elect Sci & Engn, Dept Elect Sci, Natl Innovat Platform Fus Ind & Educ Integrated Ci, Xiamen 361005, Peoples R China
[2] Xiamen Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2024年 / 125卷 / 23期
基金：
中国国家自然科学基金;
关键词：
LEDS; GAN; PERFORMANCE; CHALLENGES; BANDWIDTH; DENSITY;
D O I：
10.1063/5.0226549
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The reduction on efficiency of AlGaN-based high-voltage (HV) deep ultraviolet light emitting diodes (DUV-LEDs) with quadra-serial connection and different geometries has been investigated under electrical stress. After the electrical aging, the Shockley-Read-Hall nonradiative recombination becomes more significant, while the Auger recombination is mitigated. The hexagonal HV DUV-LEDs reach a maximum external quantum efficiency of 6.1% and exhibit superior performance after aging. The results provide insights into the impacts of submesa geometry on reliability and UV light communication performance of HV DUV-LEDs.
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页数：6
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