Determination of the Junction Temperature under Load Current in GaN Power Devices with Schottky Gate Leakage Current as TSEP

被引：1

作者：

Goller, Maximilian ^{[1
]}

Franke, Jorg ^{[1
]}

Lentzsch, Tobias ^{[1
]}

Lutz, Josef ^{[1
]}

Basler, Thomas ^{[1
]}

Mouhoubi, Samir ^{[2
]}

Curatola, Gilberto ^{[2
]}

机构：

[1] Tech Univ Chemnitz, Chair Power Elect, Chemnitz, Germany

[2] Huawei Nuremberg Res Ctr, Nurnberg, Germany

来源：

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 | 2024年

关键词：

GaN HEMT; TSEP; Schottky gate leakage; power cycling; online temperature monitoring;

D O I：

10.1109/ISPSD59661.2024.10579696

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The junction temperature of power semiconductor devices is an important parameter for power system design and reliability determination. In lateral GaN power devices, no pn-junction is present in the load current path and the commonly used V-CE (T) method cannot be applied. For Schottky p-GaN devices, the forward gate leakage current of the Schottky barrier can be used as temperature sensitive electrical parameter (TSEP). By monitoring the gate current at constant gate voltage, a load current independent temperature sensing is applicable. In this paper the I-G (T)-method is used for thermal impedance measurement.

引用

页码：498 / 501

页数：4