Effect of Variation of Non-ideal Ratio on Electrical Properties of P-N-Junction in Strong Microwave Field, Theoretical Study

Under the influence of a strong electromagnetic field, Eddy currents are generated in the p-n junction, which affects the generated currents in the sample. When exposed to a strong electromagnetic field, the sensitivity of the p-n junction I-V curve non-ideality coefficient change increases. In this case, a recombination process occurs in the p-n junction under the influence of a strong electromagnetic field, and it strongly affects the coefficient of non-ideality. The current coming out of the diode in the alternating field is only determined by the convection current, and the average value of the displacement current is always zero, which has no effect on the average current coming out of the diode, this causes the currents generated in different diodes in the electromagnetic field. Taking this into account, in this study, when electrons and holes in the p-n junction are heated under the influence of strong and weak very high frequency (VHF) fields, and the height of the potential barrier is disturbed, the increase in the value of the coefficient of non-ideality of the p-n junction I-V curve leads to an increase in the differential resistance, as well as the diffusion capacity and it is shown that it occurs due to the decrease of differential conductivity.