Efficient intraband radiative recombination in Bi-doped Si nano crystals

被引：0

作者：

Maksimova, G. M. ^{[1
]}

Fomichev, S. A. ^{[1
]}

Burdov, V. A. ^{[1
]}

机构：

[1] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603022, Russia

来源：

EPL | 2024年 / 148卷 / 05期

基金：

俄罗斯科学基金会;

关键词：

SILICON NANOCRYSTALS; DONORS; STATES;

D O I：

10.1209/0295-5075/ad95b7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is shown theoretically that sufficiently strong short-range potential of a donor in combination with the effect of quantum confinement is capable of creating great splitting of the energy levels in the conduction band of small Si nanocrystals with a Bi atom. Consequently, radiative transitions between the split levels can generate photons of the near-infrared and, even, visible ranges. Typical rates of these intraband transitions are of the order of 107 s-1, which allows one to hope for high efficiency of possible luminescence in the system.

引用

页数：7

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