Towards Reliability MRAM for Energy-Efficient Spin-orbit Torque Switching

被引：0
作者：
Fang, Zhenghan [1 ]
Naviner, Lirida [2 ]
Wang, Wen [1 ]
Le, Wei [1 ]
Cai, Hao [1 ]
机构：
[1] Southeast Univ, Natl ASIC Syst Engn Ctr, Nanjing, Peoples R China
[2] Inst Polytech Paris, Telecom Paris, LTCI, Palaiseau, France
来源：
2024 37TH SBC/SBMICRO/IEEE SYMPOSIUM ON INTEGRATED CIRCUITS AND SYSTEMS DESIGN, SBCCI 2024 | 2024年
基金：
中国国家自然科学基金;
关键词：
Spin orbit torque magnetic random access memory (SOT-MRAM); reliability issues; Behavioral modeling; advanced technology nodes; SOT-MRAM; STT-MRAM; MEMORY;
D O I：
10.1109/SBCCI62366.2024.10704006
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This work reviews the development of spin orbit torque (SOT) magnetic random access memory (MRAM) with respect to reliability over the past two decades. It presents an in-depth exploration of the foundational knowledge and physical modeling of SOT devices, detailing the impact of process, voltage, and temperature (PVT) variations alongside challenges in read and write reliability. Moreover, this review further investigates and synthesizes the recent advances in reliability enhancement strategies for SOT-MRAM at the device, manufacturing, circuit, and architectural levels. The overarching aim of this review is to foster further research into the reliability of SOT-MRAM within advanced process nodes, emphasizing its potential utility as a versatile general-purpose memory.
引用
收藏
页码：140 / 144
页数：5
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