A Novel Low-Loss Millimeter-wave Vertical Transition for Interconnects Within Multiple-Inner Layer SISL Platform

In this paper, a novel low-loss millimeter-wave vertical transition for interconnects within the multiple-inner layer substrate-integrated suspended line (SISL) platform is proposed. The coupled line structure is used to achieve vertical interconnections. Moreover, the coupled lines adopt a double metal interconnect to achieve low dielectric loss. The proposed vertical transition is designed based on the multi-layer PCB process, and it has the advantages of low loss and self-packaging. From 25 GHz to 42 GHz, i.e. a bandwidth of 50.7%, the simulated return loss is better than 20 dB and the insertion loss is smaller than 0.14 dB.